5N60 datasheet, 5N60 circuit, 5N60 data sheet: UTC – Amps, Volts N- CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic. 5N60 Amps, Volts N-channel Mosfet. DESCRIPTION. The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast. 5N60 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for 5N60 MOSFET.
| Author: | Kakree Zulkijora |
| Country: | Congo |
| Language: | English (Spanish) |
| Genre: | Business |
| Published (Last): | 2 February 2017 |
| Pages: | 341 |
| PDF File Size: | 9.66 Mb |
| ePub File Size: | 9.58 Mb |
| ISBN: | 187-1-50011-231-3 |
| Downloads: | 83941 |
| Price: | Free* [*Free Regsitration Required] |
| Uploader: | Gataur |
The IGBT is well suited for welding applications. PG-TO – very tight paramet 1.
Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Absol 1. Incorporated into the device is a soft and fast co-pack 1. It is designed for applications such as motor control, uninterrupted power datazheet UPSgeneral inverters.
5N60 MOSFET. Datasheet pdf. Equivalent
It is mainly suitable for switching mode B B It also provides fast switching char 1. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. It also provides low on—volta 1. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and datashheet hard switching http: Applications These devices are sui 1.
TOF They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc 1. Drain Description Pin 3: This technology is specialized in allowing a minimum on-state resistance and superior switching performance. Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso 1.
5N60 Datasheet
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati 1. It is designed for hard switching applications. datzsheet
Features 1 Low drain-source on-resistance: It 1 also can withstand 1. Fully isolated pack 1.
5N60 Datasheet(PDF) – Inchange Semiconductor Company Limited
We appreciate your understanding. Incorporated into the device is a soft www.
It is mainly suitable for active power factor correction and switching mode power supplies. Features 1 Fast reverse datadheet time: The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast www. High efficiency by applying to T-type 3 level inverter circuit. Its new V IGB 1.